CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C871J3
Issued Date : 2013.01.03
Revised Date :
Page No. : 1/10
MTEA0N10J3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating package
BV
DSS
I
D
R
DSON(TYP)
V
GS
=10V, I
D
=12A
V
GS
=6V, I
D
=10A
100V
16A
83mΩ
100mΩ
Equivalent Circuit
MTEA0N10J3
Outline
TO-252AB
TO-252AA
G：Gate
S：Source
D：Drain
G D S
G
D S
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=10V, T
C
=25°C
(Note 1)
Continuous Drain Current @ V
GS
=10V, T
C
=100°C
(Note 1)
Continuous Drain Current @ V
GS
=10V, T
A
=25°C
(Note 2)
Continuous Drain Current @ V
GS
=10V, T
A
=100°C
(Note 2)
Pulsed Drain Current
(Note 3)
Avalanche Current
(Note 3)
Avalanche Energy @ L=0.5mH, I
D
=11A, R
G
=25Ω
(Note 2)
Repetitive Avalanche Energy@ L=0.1mH
(Note 3)
Total Power Dissipation @T
C
=25℃
(Note 1)
Total Power Dissipation @T
C
=100℃
(Note 1)
Total Power Dissipation @T
A
=25℃
(Note 2)
Total Power Dissipation @T
A
=70℃
(Note 2)
Operating Junction and Storage Temperature Range
MTEA0N10J3
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
P
D
P
DSM
Tj, Tstg
100
±20
16
11
3.7
2.3
64
11
30
6
60
30
2.5
1.6
-55~+175
V
A
mJ
W
°C
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
