CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C406E3
Issued Date : 2008.12.02
Revised Date :2008.12.09
Page No. : 1/9
MTN10N60E3
Description
BV
DSS
: 650V @Tj=150℃
R
DS(ON)
: 0.75Ω
I
D
: 10A
The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
•
BV
DSS
=650V typically @ Tj=150℃
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant package
Applications
•
Adaptor
•
LCD Panel Power
•
TV Main Power
•
SMPS Standby Power
Symbol
MTN10N60E3
Outline
TO-220
G：Gate
D：Drain
S：Source
G D S
MTN10N60E3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
