CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C437I3
Issued Date : 2009.01.23
Revised Date :2009.02.04
Page No. : 1/8
MTN1N65I3
Description
BV
DSS
: 700V @Tj=150℃
R
DS(ON)
: 9.5Ω
I
D
: 1.0A
The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-251 package is universally preferred for all commercial-industrial applications
Features
•
BV
DSS
=700V typically @ Tj=150℃
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant package
Applications
•
Cell phone charger
•
Standby power
Symbol
MTN1N65I3
Outline
TO-251
G：Gate
D：Drain
S：Source
G
B
D S
C
MTN1N65I3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
