CYStech Electronics Corp.
ESD protected N-CHANNEL MOSFET
Spec. No. : C447S3
Issued Date : 2009.04.29
Revised Date : 2009.06.03
Page No. : 1/6
MTN2002ZS3
Description
• Low voltage drive, 1.8V
• Easy to use in parallel
• High speed switching
• ESD protected device
• Pb-free package
BV
DSS
I
D
R
DSON
20V
100mA
3Ω
Symbol
MTN2002ZS3
Outline
SOT-323
D
G:Gate
S:Source
D:Drain
G
S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (T
a
=25°C)
Total Power Dissipation (T
a
=25°C)
Total Power Dissipation (T
c
=25°C)
ESD susceptibility
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Lead Temperature, for 10 second Soldering
Note : *1. Pulse Width
≤
300μs, Duty cycle
≤2%
*2. Human body model, 1.5kΩ in series with 100pF
MTN2002ZS3
CYStek Product Specification
Symbol
BV
DSS
V
GS
I
D
I
DM
P
D
Tj
Rth,ja
Rth,jc
T
L
Limits
20
±8
100
400
*1
200
400
350
*2
-55~+150
625
250
260
Unit
V
V
mA
mA
mW
V
°C
°C/W
°C/W
°C