CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C431J3
Issued Date : 2008.12.11
Revised Date : 2009.02.04
Page No. : 1/9
MTN20NF06J3
Features
•
V
DS
=60V, I
D
=50A, R
DS(ON)
=22mΩ
•
Low Gate Charge
•
Simple Drive Requirement
•
RoHS compliant package
•
Repetitive Avalanche Rated
•
Fast Switching Characteristic
BV
DSS
60V
I
D
50A
R
DSON
22mΩ
Symbol
MTN20NF06J3
Outline
TO-252
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings
(T
C
=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C
Continuous Drain Current @ T
C
=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
=25℃)
Derates above 25°C
Operating Junction and Storage Temperature
V
DS
V
GS
I
D
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 3)
I
DM
I
AR
E
AS
E
AR
dv/dt
P
D
Tj, Tstg
60
±20
50
35
200
50
447
6
7
60
0.4
-55~+175
V
V
A
mJ
V/ns
W
W/°C
°C
Note : *1
.
Repetitive Rating : Pulse width limited by maximum junction temperature
*2. L=230μH, IAS=50A,VDD=25V, starting TJ=+25℃
*3. ISD≤50A, dI/dt<100A/μs, VDD≤BVDSS, TJ≤Tj(max).
MTN20NF06J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
