CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C323N3
Issued Date : 2004.04.05
Revised Date : 2004.10.22
Page No. : 1/5
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MTN2302N3
Features
•
V
DS
=20V
R
DS(ON)
=65m
Ω
@V
GS
=4.5V, I
DS
=3.6A
R
DS(ON)
=95m
Ω
@V
GS
=2.5V, I
DS
=3.1A
•
Advanced trench process technology
•
High density cell design for ultra low on resistance
•
Excellent thermal and electrical capabilities
•
Compact and low profile SOT-23 package
Equivalent Circuit
MTN2302N3
Outline
SOT-23
D
G
G：Gate
S：Source
D：Drain
S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
Ta=25℃
Ta=75℃
P
D
Tj
Tstg
Limits
20
±8
2.4
10
1.25
0.8
-55~+150
-55~+150
Unit
V
V
A
A
W
°C
°C
MTN2302N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
