CYStech Electronics Corp.
20V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C323V3
Issued Date : 2009.01.19
Revised Date :
Page No. : 1/9
MTN2302V3
Features
•
V
DS
=20V
R
DS(ON)
=85m
Ω
(max.)@V
GS
=4.5V, I
DS
=3.6A
R
DS(ON)
=115m
Ω
(max.)@V
GS
=2.5V, I
DS
=3.1A
•
Simple drive requirement
•
Small package outline
•
Capable of 2.5V gate drive
•
Pb-free package
Symbol
MTN2302V3
Outline
TSOT-23
D
G:Gate
S:Source
D:Drain
G
S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=4.5V, T
A
=25°C
(Note 3)
Continuous Drain Current @V
GS
=4.5V, T
A
=70°C
(Note 3)
Pulsed Drain Current
(Notes 1, 2)
Maximum Power Dissipation@ T
A
=25℃
Linear Derating Factor
Operating Junction and Storage Temperature
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Tj, Tstg
Limits
20
±8
3.2
2.6
10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270
°C/W
when mounted on minimum copper pad
MTN2302V3
CYStek Product Specification