CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C741J3
Issued Date : 2009.09.21
Revised Date :2012.12.13
Page No. : 1/9
MTN2510LJ3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Repetitive Avalanche Rated
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
R
DSON(TYP)
V
GS
=10V, I
D
=30A
V
GS
=5V, I
D
=20A
100V
50A
19mΩ
20mΩ
Symbol
MTN2510LJ3
Outline
TO-252AB
TO-252AA
G：Gate
D：Drain
S：Source
G D S
G D S
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=10V
Continuous Drain Current @ T
C
=100°C, V
GS
=10V
Pulsed Drain Current
(Note 1)
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=30A, R
G
=25Ω
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
T
C
=25°C
Power Dissipation
T
C
=100°C
Operating Junction and Storage Temperature
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle
≤
1%
MTN2510LJ3
V
DS
V
GS
I
D
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
100
±20
50
35
150
30
45
22.5
130
65
-55~+175
V
A
mJ
W
°C
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
