CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C435I3
Issued Date : 2009.01.20
Revised Date :2009.02.05
Page No. : 1/9
MTN2N60I3
Description
BV
DSS
: 650V @Tj=150℃
R
DS(ON)
: 4.7Ω
I
D
: 1.9A
The MTN2N60I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-251 package is universally preferred for all commercial-industrial applications
Features
•
BV
DSS
=650V typically @ Tj=150℃
•
Low On Resistance
•
Simple Drive Requirement
•
Low Gate Charge
•
Fast Switching Characteristic
•
RoHS compliant package
Applications
•
Open Framed Power Supply
•
Adapter
•
STB
Symbol
MTN2N60I3
Outline
TO-251
G：Gate
D：Drain
S：Source
G
B
D S
C
MTN2N60I3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
