CYStech Electronics Corp.
30V N-CHANNEL Enhancement Mode MOSFET
Spec. No. : C414N3
Issued Date : 2007.07.05
Revised Date : 2007.12.18
Page No. : 1/ 7
MTN3400N3
Features
•
V
DS
=30V
R
DS(ON)
=33m
Ω
@V
GS
=4.5V, I
D
=5A
R
DS(ON)
=52m
Ω
@V
GS
=2.5V, I
D
=4A
•
Low on-resistance
•
Low gate charge
•
Excellent thermal and electrical capabilities
•
Compact and low profile SOT-23 package
Equivalent Circuit
MTN3400N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
G
S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C
(Note 3)
Continuous Drain Current @ T
A
=70°C
(Note 3)
Pulsed Drain Current
(Note 1, 2)
Maximum Power Dissipation @ T
A
=25℃
Linear Derating Factor
Thermal Resistance, Junction-to-Ambient
(Note 3)
Operating Junction and Storage Temperature
Symbol
V
DS
V
GS
I
D
I
D
I
DM
P
D
R
th,ja
Tj, Tstg
Limits
30
±12
5.8
4.9
30
1.38
0.01
90
-55~+150
Unit
V
V
A
A
A
W
W/°C
°C/W
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270
°C/W
when mounted on minimum copper pad
.
MTN3400N3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
