CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Spec. No. : C382Q8
Issued Date : 2007.06.14
Revised Date :
Page No. : 2/5
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C
Continuous Drain Current @ T
A
=70°C
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction-to-ambient, max
Operating Junction and Storage Temperature
V
DS
V
GS
I
D
I
D
I
DM
P
D
R
th,j-a
Tj, Tstg
30
±20
13.8 *1
11 *1
50 *2
2.5
0.02
50 *1
-55~+150
V
V
A
A
A
W
W/°C
°C/W
°C
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Static
BV
DSS
30
∆BV
DSS
/∆Tj
-
V
GS(th)
1.0
G
FS
-
I
GSS
-
I
DSS
-
I
DSS
-
*R
DS(ON)
-
*R
DS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*V
SD
-
*trr
-
*Qrr
-
Typ.
-
0.02
-
21
-
-
-
-
-
23
6
15
13
9
35
17
1920
410
300
0.9
-
33
26
Max.
-
-
3.0
-
±
100
1
25
9
14
35
-
-
-
-
-
-
3070
-
-
-
1.2
-
-
Unit
V
V/°C
V
S
nA
μA
μA
m
Ω
m
Ω
Test Conditions
V
GS
=0, I
D
=250μA
Reference to 25°C, I
D
=1mA
V
DS
= V
GS
, I
D
=250μA
V
DS
=10V, I
D
=13A
V
GS
=
±
20
V
DS
=30V, V
GS
=0
V
DS
=24V, V
GS
=0, Tj=70°C
V
GS
=10V, I
D
=13A
V
GS
=4.5V, I
D
=10A
nC
I
D
=13A, V
DS
=24V, V
GS
=4.5V
V
DS
=25V, I
D
=1A, V
GS
=10V,
R
G
=3.3
Ω
, R
D
=15
Ω
ns
pF
Ω
V
ns
nC
V
GS
=0V, V
DS
=25V, f=1MHz
f=1MHz
I
S
=2.1A, V
GS
=0V
I
S
=13A, V
GS
=0, dI/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTN4424Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
