CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C411J3
Issued Date : 2007.07.05
Revised Date : 2009.02.04
Page No. : 1/7
MTN55N03J3
Features
•
Dynamic dv/dt Rating
•
Simple Drive Requirement
•
Repetitive Avalanche Rated
•
Fast Switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
R
DSON
25V
55A
6mΩ
Symbol
MTN55N03J3
Outline
TO-252
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=10V, T
C
=25°C
Continuous Drain Current @V
GS
=10V, T
C
=100°C
Pulsed Drain Current
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Operating Junction and Storage Temperature
Note : *1
.
Pulse width limited by safe operating area
*2 . Tj=25°C, V
DD
=20V, L=0.1mH, R
G
=25Ω, I
AS
=10A
MTN55N03J3
V
DS
V
GS
I
D
I
D
I
DM
Pd
E
AS
I
AS
Tj, Tstg
25
±20
55
35
215 *1
62.5
0.5
240 *2
31
-55~+150
V
V
A
A
A
W
W/°C
mJ
A
°C
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
