CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C418J3
Issued Date : 2008.08.20
Revised Date : 2009.02.04
Page No. : 1/7
MTN9973J3
Features
•
V
DS
=60V
BV
DSS
I
D
R
DSON
60V
14A
80mΩ
R
DS(ON)
=80m
Ω
(max.)@V
GS
=10V, I
D
=9A
R
DS(ON)
=100m
Ω
(max.)@V
GS
=4.5V, I
D
=6A
•
Low Gate Charge
•
Simple Drive Requirement
•
Repetitive Avalanche Rated
•
Fast Switching Characteristic
•
RoHS compliant package
Symbol
MTN9973J3
Outline
TO-252
G:Gate
D:Drain
S:Source
G D S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=10V, T
C
=25°C
Continuous Drain Current @V
GS
=10V, T
C
=100°C
Pulsed Drain Current
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1
.
Pulse width limited by safe operating area
MTN9973J3
V
DS
V
GS
I
D
I
D
I
DM
Pd
Tj, Tstg
60
±20
14
9
40 *1
27
0.22
-55~+150
V
V
A
A
A
W
W/°C
°C
CYStek Product Specification