CYStech Electronics Corp.
30V P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C420M3
Issued Date : 2007.10.08
Revised Date :
Page No. : 1/7
MTP162M3
Features
•
Single Drive Requirement
•
Low On-resistance, R
DS(ON)
=80mΩ@V
GS
=-4.5V, I
D
=-3.0A
•
Ultra High Speed Switching
•
Pb-free package
Symbol
MTP162M3
Outline
SOT-89
G：Gate
S：Source
D：Drain
G D
D S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C
Continuous Drain Current @ T
A
=70°C
Pulsed Drain Current
Total Power Dissipation (T
A
=25℃)
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature
Note : *1
.
Pulse width limited by maximum junction temperature
V
DS
V
GS
I
D
I
D
I
DM
Pd
Rth,ja
Tj, Tstg
-30
±12
-3.2
-2.6
-10
*1, 3
2
*2
0.01
90
*2
-55~+150
V
V
A
A
A
W
W/°C
°C/W
°C
*2. Surface mounted on 1 in² copper pad of FR-4 board; 270
°C/W
when mounted on min. copper pad
*3. Pulse width≤300μs, duty cycle≤2%
MTP162M3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
