CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @T
A
=25
°C
Continuous Drain Current @T
A
=70
°C
Pulsed Drain Current
(Note 1)
Total Power Dissipation @ T
A
=25
°C
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient
Note : 1.Pulse width limited by maximum junction temperature.
Spec. No. : C391Q8
Issued Date : 2007.06.08
Revised Date :
Page No. : 2/6
Symbol
BV
DSS
V
GS
I
D
I
D
I
DM
Pd
Tj
Tstg
Rth,j-a
Limits
-30
±20
-8
-6
-50
2.5
0.02
-55~+150
-55~+150
50
Unit
V
V
A
A
A
W
W /
°C
°C
°C
°C/W
Electrical Characteristics
(Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BV
DSS
-30
-
-
V
V
GS
=0, I
D
=-250μA
ΔV
DSS
/ΔTj
-
-0.037
-
V/°C
Reference to 25°C, I
D
=-1mA
V
GS(th)
-1
-
-3
V
V
DS
=V
GS
, I
D
=-250μA
I
GSS
-
-
±100
nA
V
GS
=±20V, V
DS
=0
I
DSS
-
-
-1
μA
V
DS
=-30V, V
GS
=0
I
DSS
-
-
-5
μA
V
DS
=-24V, V
GS
=0, Tj=70°C
-
-
20
I
D
=-8A, V
GS
=-10V
*R
DS(ON)
mΩ
-
-
35
I
D
=-5A, V
GS
=-4.5V
*G
FS
-
20
-
S
V
DS
=-10V, I
D
=-8A
Ciss
-
-
2800
pF
V
DS
=-15V, V
GS
=0, f=1MHz
Coss
-
-
1400
Crss
-
-
350
t
d(ON)
-
-
30
ns
V
DD
=-15V, I
D
=-1A,
t
r
-
-
20
ns
V
GS
=-10V, R
G
=6
Ω
, R
D
=15
Ω
t
d(OFF)
-
-
120
ns
t
f
-
-
80
ns
Qg
-
47
-
nC
V
DS
=-15V, I
D
=-4.6A,
Qgs
-
9.5
-
nC
V
GS
=-10V,
Qgd
-
8
-
nC
I
S
-
-
-2.1
A
V
D
=V
G
=0, V
S
=-1.2V
*V
SD
-
-0.75
-1.2
V
V
GS
=0V, I
SD
=-2.1A
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTP4435Q8
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
