CYStech Electronics Corp.
P-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : C830L3
Issued Date : 2013.02.01
Revised Date :
Page No. : 1/8
MTP4835L3
Features
•
Low Gate Charge
•
Simple Drive Requirement
•
Pb-free lead plating & Halogen-free package
BV
DSS
I
D
R
DSON
@V
GS
=-10V, I
D
=-10A
R
DSON
@V
GS
=-5V, I
D
=-7A
-30V
-10A
21mΩ (typ)
28mΩ (typ)
Equivalent Circuit
MTP4835L3
Outline
SOT-223
D
S
D
G：Gate D：Drain
S：Source
G
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ V
GS
=-10V, T
C
=25°C
Continuous Drain Current @ V
GS
=-10V, T
C
=100°C
Continuous Drain Current @ V
GS
=-10V, T
A
=25°C
Continuous Drain Current @ V
GS
=-10V, T
A
=70°C
Pulsed Drain Current
*1
Avalanche Current
Avalanche Energy @ L=0.1mH, I
D
=-10A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
*2
Total Power Dissipation @T
A
=25℃
Total Power Dissipation @T
A
=100℃
Operating Junction and Storage Temperature Range
MTP4835L3
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
Pd
Tj, Tstg
-30
±25
-13
-9.2
-10
-8.4
-40
-10
5
2.5
3.3
1.65
-55~+175
V
A
mJ
W
°C
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
