CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C386N6
Issued Date : 2013.08.19
Revised Date : 2013.09.06
Page No. : 1/9
MTP6405N6
Description
BV
DSS
I
D
R
DSON(MAX)
@V
GS
=-10V, I
D
=-5A
R
DSON(MAX)
@V
GS
=-4.5V, I
D
=-4A
-30V
-6.5A
24mΩ(typ.)
34mΩ(typ.)
The MTP6405N6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
•
Simple drive requirement
•
Low on-resistance
•
Small package outline
•
Pb-free lead plating package
Equivalent Circuit
MTP6405N6
G：Gate
S：Source D：Drain
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
T
C
=25
°C
T
C
=70
°C
T
A
=25
°C
T
A
=70
°C
Symbol
V
DS
V
GS
(Note 1)
(Note 1)
I
D
Pulsed Drain Current
(Note 2, 3)
I
DM
T
C
=25
°C
T
C
=70
°C
Total Power Dissipation
T
A
=25
°C
T
A
=70
°C
Operating Junction Temperature and Storage Temperature Range
P
D
Tj, Tstg
Limits
-30
±20
-8.2
-6.6
-6.5
-5.2
-30
3.2
2.1
2
1.25
-55~+150
Unit
V
A
W
°C
MTP6405N6
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
