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MTP658G6 参数 Datasheet PDF下载

MTP658G6图片预览
型号: MTP658G6
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型MOSFET [P-Channel Enhancement Mode MOSFET]
分类和应用:
文件页数/大小: 9 页 / 353 K
品牌: CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
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CYStech Electronics Corp.
P-Channel Enhancement Mode MOSFET
Spec. No. : C400G6
Issued Date : 2012.12.20
Revised Date :
Page No. : 1/9
MTP658G6
Description
BV
DSS
I
D
R
DSON
@V
GS
=-10V, I
D
=-5A
R
DSON
@V
GS
=-4.5V, I
D
=-3.7A
R
DSON
@V
GS
=-4V, I
D
=-3A
R
DSON
@V
GS
=-3V, I
D
=-1.5A
-30V
-5.2A
39mΩ(typ.)
61mΩ(typ.)
69mΩ(typ.)
116mΩ(typ.)
The MTP658G6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low on-resistance
Small package outline
Pb-free lead plating package
Equivalent Circuit
MTP658G6
G:Gate S:Source D:Drain
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=-4.5V, T
A
=25
°C
(Note 1)
Continuous Drain Current @ V
GS
=-4.5V, T
A
=70
°C
(Note 1)
Pulsed Drain Current
(Note 2, 3)
Total Power Dissipation @ T
A
=25
°C
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Resistance, Junction-to-Ambient
(Note 1)
Thermal Resistance, Junction-to-Case
Symbol
V
DS
V
GS
I
D
I
D
I
DM
Pd
Tj ; Tstg
R
θJA
R
θJC
Limits
-30
±20
-5.2
-4.2
-30
1.6
0.013
-55~+150
78
25
Unit
V
V
A
A
A
W
W /
°C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156
/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width
≤300μs,
Duty Cycle≤2%
MTP658G6
CYStek Product Specification