CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C419J3
Issued Date : 2007.09.21
Revised Date : 2009.02.04
Page No. : 1/7
MTP6679J3
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast switching Characteristic
•
RoHS compliant package
BV
DSS
I
D
R
DSON
-30V
-50A
10mΩ
Symbol
MTP6679J3
Outline
TO-252
G：Gate
D：Drain
S：Source
G D S
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=-10V, T
C
=25°C
Continuous Drain Current @V
GS
=-10V, T
C
=100°C
Pulsed Drain Current
Total Power Dissipation (T
C
=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Note : *1
.
Pulse width limited by safe operating area
V
DS
V
GS
I
D
I
D
I
DM
Pd
Tj, Tstg
-30
±25
-50
-35
-180 *1
89
0.71
-55~+150
V
V
A
A
A
W
W/°C
°C
MTP6679J3
CYStek Product Specification
CYSTEKEC [ CYSTECH ELECTONICS CORP. ]
