SIYU
R
双向触发二极管
DO-35 Glass
DB3/DB4
SILICON BIDIRECTIONAL DIAC
特征
Features
·反向漏电流�½�
Low reverse leakage
·正向浪涌承受�½力较强
High forward surge capability
·高温焊接保证
High temperature soldering guaranteed:
260℃/10
秒,
0.375" (9.5mm)引线长度。
260℃/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 磅
(2.3kg)
拉力。
5 lbs. (2.3kg) tension
·引线和管�½�皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据
Mechanical Data
Unit：mm
·端子: 镀锡�½�向引线
Terminals: Plated axial leads
·安装�½��½�: 任意
Mounting Position: Any
极限参数(
LIMITING VALUES )
符号
Symbols
P
c
功耗
Power Dissipation
峰值脉冲电压
参数
Parameters
T
A
=50
℃
tp=10uS
F=100Hz
Value
DB3/DB4
150
单�½�
Unit
mW
I
TRM
Repetitive Peak on-state Current
贮存 温度范围
Storage Temperature
工�½�结温范围
0 perating Junction Temperature
2.0
A
T
STG
-40 to +125
℃
T
J
-40 to +100
℃
电特性(ELECTRICAL
CHARACTERISTICS)
符号
Symbols
V
BO
击穿电压
参数
Parameters
测试条件
Test Conditions
C=22nF [Note 2 ]
See Diagram 1
C=22nF [Note 2 ]
See Diagram 1
△I=[
I
BO
to IF=10mA ]
See Diagram 1
See Diagram 2
C=22nF [Note 2 ]
See Diagram 3
V
BBO
=0.5V max
See Diagram 1
See Diagram 2 (Gate)
Min
Typ
Max
Max
Min
Min
Max
Typ
Max
Min
Value
DB3
28
32
36
±3
5
5
100
1.5
10
0.3
单�½�
DB4 Unit
35
40
45
V
V
V
uA
uS
uA
A
V
Breakover Voltage [Note 2 ]
击穿电压对称性
Breakover Voltage Symmetry
动态回弹电压
Dynamic Breakover Voltage [Note 1 ]
输出电压
Output Voltage [Note 1 ]
击穿电流
Breakover Current [Note 1 ]
上升时间
Rise Time [Note 1 ]
漏电电流
Leakage Current [Note 1 ]
峰值电流
Peak Current [Note 1 ]
I+V
BO
I- I-V
BO
I
I ±
△VI
V
o
I
BO
tr
I
B
I
P
Notes:1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
大昌电子
DACHANG ELECTRONICS
DACHANG [ RUGAO DACHANG ELECTRONICS CO., LTD ]
