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1N4934 参数 Datasheet PDF下载

1N4934图片预览
型号: 1N4934
PDF下载: 下载PDF文件 查看货源
内容描述: 当前1.0安培电压50至600伏 [CURRENT 1.0 Ampere VOLTAGE 50 to 600 Volts]
分类和应用:
文件页数/大小: 2 页 / 227 K
品牌: DAESAN [ DAESAN ELECTRONICS CORP. ]
 浏览型号1N4934的Datasheet PDF文件第2页  
1N4933 THRU 1N4937
Features
· Plastic package has Underwrites Laboratory Flammability
Classification 94V-0
· Fast switching speed
· Construction utilizes void-free molded plastic technique
· 1.0A operation at T
A
=75℃ with to terminal runaway
· High temperature soldering guaranteed : 250℃/10 seconds,
0.375"(9.5mm) lead length, 5 lbs.(2.3kg) tension.
CURRENT 1.0 Ampere
VOLTAGE 50 to 600 Volts
DO-41
0.107(2.7)
0.080(2.0)
DIA.
1.0(25.4)
MIN.
0.205(5.2)
0.166(4.2)
Mechanical Data
· Case : JEDEC DO-41 molded plastic body
· Terminals : Plated axial lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.012 ounce, 0.34 gram
0.034(0.9)
0.028(0.7)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375"(9.5mm) lead length T
A
=75℃
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method) at T
A
=75℃
Maximum instantaneous forward voltage
at 1.0A
Maximum DC reverse current at rated DC
blocking voltage
Maximum full load reverse current full cycle
average. 0.375"(9.5mm) lead length at
T
L
=55℃
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Operating junction and storage
temperature range
I
R
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
1N4933
50
35
50
1N4934
100
70
100
1N4935
200
140
200
1.0
30.0
1.3
5.0
1N4936
400
280
400
1N4937
600
420
600
Units
Volts
Volts
Volts
Amp
Amps
Volts
μA
100
Trr
C
J
T
J
T
STG
150
15.0
-65 to +150
ns
pF
Notes:
(1) Test conditions: I
F
=1.0A, V
R
=30V, di/dt=50A/μS, and Irr=10%I
RM
.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.