BAT54H
Features
Low Turn-on Voltage
Extremely Fast Switching Speed
PN Junction Guard Ring for Transient and
ESD Protection
Surface Mount Schottky
Barrier Diode
PACKAGE DIMENSIONS
SOD-323
PLASTIC PACKAGE
K
A
D
B
Mechanical Data
Case: Molded Plastic
Polarity: See Diagrams Below
Mounting Position : Any
Low Forward Voltage : 0.35 Volts (Typ) @ IF = 10 mAdc
Shipping : 3000 / Tape & Reel
1
CATHODE
1
2
E
C
J
H
1
2
PIN 1. CATHODE
2. ANODE
2
ANODE
BA T 54 H M ar king : JV
NOTE 3
MAXIMUM
Symbol
VR
R ATING S
(T J = 125
5C
unless otherwise noted)
Rating
Reverse Voltage
Value
30
Unit
V
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS.
3.LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
1.60
1.80
0.063
0.071
1.15
1.35
0.045
0.053
0.80
1.00
0.031
0.039
0.25
0.40
0.010
0.016
0.15 REF
0.006 REF
0.00
0.10
0.000
0.004
0.089
0.177 0.0035 0.0070
2.30
2.70
0.091
0.106
Ty p
7.6
0.5
0.22
0.41
0.52
Max
10
2.0
0.24
0.5
1.0
5.0
0.29
0.35
0.32
0.40
200
300
600
Unit
Volts
pF
Adc
Vdc
Vdc
Vdc
ns
Vdc
Vdc
mAdc
mAdc
mAdc
THERMAL
Symbol
PD
CHARACTERISTICS
Characteristic
Total Device Dissipation FR –5 Board,*
T A = 25
o
C
o
Derate above 25
C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Max
200
1.57
635
150
Unit
mW
o
mW/
C
O
R JA
T J , Tstg
C/W
o
C
ELECTRICAL
*FR FR-4Minimum Pad
–4
CHARACTERISTICS
Characteristic
o
(T A = 25
C
unless otherwise noted)
DIM
A
B
C
D
E
H
J
K
Symbol
V (BR)R
CT
IR
VF
VF
VF
trr
VF
VF
IF
I FRM
I FSM
Min
30
Reverse Breakdown Voltage (I R = 10
Reverse Leakage (V R = 25 V)
Forward Voltage (I F = 0.1 mAdc)
Forward Voltage (I F = 30 mAdc)
Forward Voltage (I F = 100 mAdc)
A)
Total Capacitance (V R = 1.0 V, f = 1.0 MHz)
Reverse Recovery Time
(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc) Figure 1
Forward Voltage (I F = 1.0 mAdc)
Forward Voltage (I F = 10 mAdc)
Forward Current (DC)
Repetitive Peak Forward Current
Non-RepetitivePeak Forward Current (t < 1.0 s)
DAESAN [ DAESAN ELECTRONICS CORP. ]
