BZX84 SERIES
R atings and
C harac teris tic C ur ves
(T
A
= 25
℃
unles s otherwis e noted)
500
See Note 1
300mW SOT-23
ZENER DIODES
50
T
j
= 25°C
C2V7
C3V9
C5V6
C6V8
C3V3
C4V7
I
Z
, ZENER C URRENT (mA)
400
40
C8V2
P
d
, Power Dissipation (mW)
300
30
200
20
100
10
Test Current I
Z
5.0mA
0
0
100
200
0
0
1
T
A
, Ambient Temperature, (°C)
Fi g. 1 Power Derating Curve
3
4
5
6
8
9
7
V
Z
, ZENER VOL TAGE (V)
Fi g. 2 Zener Breakdown C haracteristics
C47
C43
C51
2
10
30
T
j
= 25°C
C10
C12
10
Tj = 25°C
C39
(mA)
20
C15
I
Z
, ZENER CURRENT
(mA)
C18
Test current I
Z
2mA
C22
8
I
Z
, ZENER CURRENT
6
4
Test Current I
Z
2mA
10
Test current I
Z
5mA
C27
C33
C36
2
0
0
10
20
30
V
Z
, ZENER VOL TAGE (V)
Fi g. 3 Zener Breakdown Characteristics
1000
0
40
10
30 40 50 60 70 80 90
V
Z
, ZENER VOL TAGE (V)
Fi g. 4 Zener Breakdown C haracteristics
20
100
T
j
= 25 °C
C
j
, JUNCTION CAP ACIT ANCE (pF)
V
R
= 1V
V
R
= 2V
100
V
R
= 1V
V
R
= 2V
10
1
10
100
V
Z
, NOMINAL ZENER VOL TAGE (V)
Fig. 5 Junction Capacitance vs Nominal Zener Voltage
DAESAN [ DAESAN ELECTRONICS CORP. ]
