ES3A THRU ES3J
Features
· For surface applications in order optimize board space
· Low profile package
· Built-in strain relief, ideal for automated placement
· Super fast recovery time
· Plastic package has Unerwrites Laboratory
Flammability Classification 94V-0
· Ideally suited for use in very high frequency switching
power supplies, inverters and as free wheeling diodes
· Glass passivated chip junction
· High temperature soldering guaranteed: 250℃/10
seconds, at terminals
CURRENT 3.0 Amperes
VOLTAGE 50 to 400 Volts
DO-214AB (SMC)
0.124(3.15)
0.108(2.75)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
0.012(0.31)
0.006(0.15)
0.103(2.62)
0.079(2.00)
0.050(1.27)
0.030(0.76)
0.008(0.203)
MAX.
0.320(8.13)
0.305(7.75)
Mechanical Data
· Case : JEDEC SMC(DO-214AB) molded plastic body
· Terminals : Plated axial lead solderable per
MIL-STD-750, method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.007 ounce, 0.25 gram
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=100℃
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method) at T
L
=100℃
Maximum instantaneous forward voltage
at 3.0A
Maximum reverse
current at rated voltage
T
A
=25℃
T
A
=100℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Rθ
JL
Rθ
JA
C
J
T
J
T
STG
ES3A
50
35
50
ES3B
100
70
100
ES3C
150
105
150
3.0
100.0
0.95
10.0
500
35
12.0
47.0
45.0
ES3D
200
140
200
ES3G
400
280
400
ES3J
600
420
600
Units
Volts
Volts
Volts
Amps
Amps
1.25
Volts
μA
ns
℃/W
350
Maximum reverse recovery time (Note 1)
Typical thermal resistance (Note 3)
Typical junction capacitance (Note 2)
Operating junction and storage
temperature range
30.0
-55 to +150
pF
℃
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.
(3) Units mounted on P.C.B 0.31×0.31"(0.8×0.8mm) copper pad areas
DAESAN [ DAESAN ELECTRONICS CORP. ]
