HEP805 参数 Datasheet PDF下载

HEP801 THRU HEP806

Features

· Plastic package has Underwriters Laboratory Flammability

Classification 94V-0

· Low forward voltage drop

· High current capability

· High reliability

· Low power loss, high effciency

· High surge current capability

· High speed switching

· Low leakage

3.7 0.2

CURRENT 8.0 Amperes

VOLTAGE 50 to 600 Volts

ITO-220A

10 0.5

3.2

6.4 0.1

4.5 0.2

2.7

2.7 0.2

Mechanical Data

· Case : JEDEC ITO-220A molded plastic body

· Terminals : Lead solderable per

MIL-STD-750, method 2026

· Polarity : As marked

· Mounting Position : Any

· Weight : 0.08 ounce, 2.24 gram

5.08

+

0.7 0.2

13Min

1.3 0.2

15 0.3

0.5

2.4

PIN 1

PIN 1

CASE

PIN 2

CasePositive

+

CASE

PIN 2

+

Case Negative

Suffix"R"

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

Symbols

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375"(9.5mm) lead length @ at T

A

=100℃

Peak forward surge current 8.3ms single

half sine-wave superimposed on rated load

(JEDEC method)

Maximum instantaneous forward voltage

at 8.0A

Maximum DC reverse current at rated DC

blocking voltage T

A

=25℃

Maximum DC reverse current at rated DC

blocking voltage T

A

=125℃

Maximum reverse recovery time (Note 1)

Typical junction capacitance (Note 2)

Typical thermal resistance (Note 3)

Operating junction and storage

temperature range

I

R

V

RRM

V

RMS

V

DC

I

(AV)

I

FSM

V

F

HEP

801

50

35

50

HEP

802

100

70

100

HEP

803

200

140

200

8.0

125

1.0

10.0

HEP

804

300

210

300

HEP

805

400

280

400

HEP

806

600

420

600

Units

Volts

Volts

Volts

Amps

Amps

1.3

1.7

Volts

μA

100

Trr

C

J

50

80

2.2

-55 to +150

-55 to +150

80

50

ns

pF

℃/W

℃

Rθ

JC

T

J

T

STG

Notes:

(1) Test conditions: I

F

=0.5A, I

R

=1.0A, I

rr

=0.25A.

(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

(3) Thermal resistance from junction to case mounting on heatsink.