LL4448
Features
· Silicon epitaxial planar diode
· Fast switching diodes
· 500mW power dissipation
· This diode is also available in the DO-35 case with
the type designation 1N4448
SMALL SIGNAL
SWITCHING DIODES
MELF (DO-35)
SOLDERABLE ENDS
0.020(0.50)
0.011(0.28)
Mechanical Data
· Case: MiniMELF glass case (DO-35)
· Weight: Approx. 0.05 gram
0.146(3.70)
0.130(3.30)
0.063(1.60)
0.051(1.30)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Reverse Voltage
Peak Reverse Voltage
Average rectified current, Half wave rectification with
Resistive load at T
A
=25℃ and F≥50Hz
Surge forward current at t<1S and T
J
=25℃
Power dissipation at T
A
=25℃
Junction temperature
Storage temperature range
Symbol
V
R
V
RM
I
AV
I
FSM
Ptot
T
J
T
STG
Value
75
100
150
1)
500
500
1)
175
-65 to +175
Units
Volts
Volts
mA
mA
mW
℃
℃
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Electrical characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Forward voltage
Leakage current
at I
F
=5mA
at I
F
=10mA
at V
R
=20V
at V
R
=75V
at V
R
=20V, T
J
=150℃
Junction Capacitance at V
R
=V
F
=0V
Reverse breakdown voltage tested with 100μA Pulse
Reverse Recovery time from I
F
=10mA to I
R
=1mA,
V
R
=6V, R
L
=100Ω
Thermal resistance, junction to Ambient
Rectification efficiency at f=100MHz, V
RF
=2V
Symbols
V
F
V
F
I
R
I
R
I
R
C
J
V
(BR)R
trr
Rθ
JA
Min.
Typ.
Max.
0.72
1
25
5
50
4
Units
V
V
nA
μA
μA
pF
V
100
4
350
1)
0.45
ns
K/W
η
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
DAESAN [ DAESAN ELECTRONICS CORP. ]
