MMBD301
* Low Turn-on Voltage
* For UHF and VHF detector application
* Also suitable for some others Fast Switching
R
F
and digital application
* Extremely Low Minority Carrier Lifetime - 15ps(Typ)
* Low Reverse Leakage - IR=13nAdc(Typ)
* Very Low Capacitance-1.5pF(Max)@V=15VR
Surface Mount Schottky
Barrier Diode
Features
A
L
2
B S
1
V
3
To p View
G
Mechanical Data
* Case . Molded Plastic
* Terminals : Solderable per MIL-STD-202,
Method 208
* Polarity : See Diagrams Below
* Weight : 0.008 grams(approx.)
* Mounting Position : Any
1
C
D
3
2
H
K
J
3
CATHODE
1
ANODE
SOT-23
Dim
Min
Max
A
2.800 3.040
B
1.200 1.400
C
0.890 1.110
D
0.370 0.500
G
1.780 2.040
H
0.013 0.100
J
0.085 0.177
K
0.450 0.600
L
0.890 1.020
S
2.100 2.500
V
0.450 0.600
All Dimension in mm
MAXIMUM RATINGS
MMBD101
Rating
Reverse Voltage
Forward Power Dissipation
o
@ T A = 25
C
o
Derate above 25
C
Operating Junction TEmperature Range
Storage Temperature Range
Symbol
VR
PF
Value
30
Unit
Volts
mW
mW/
o
C
o
200
2.0
-55 to +125
-55 to +150
TJ
Tstg
C
o
C
DEVICE MARKING
MMBD701
= 5H
ELECTRICAL
CHARACTERISTICS
(T A = 25
C
unless otherwise noted)
o
Characteristic
Reverse Breakdown Voltage
(I R = 10 Adc)
Total Capacitance
(V R = 15V f = 1.0 MHz )Figure 1
Reverse Leakage
(V
R
=25V) Figure 3
Forward Voltage
(I F = 10 mAdc)
Figure4
Symbol
V (BR)R
CT
IR
Min
Typ
Max
Unit
Volts
30
0.9
13
1.5
200
pF
VF
VF
0.38
0.52
0.45
0.6
NAdc
Vdc
Vdc
Forward Voltage
(I F = 10 mAdc)
Figure4
DAESAN [ DAESAN ELECTRONICS CORP. ]
