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S3J 参数 Datasheet PDF下载

S3J图片预览
型号: S3J
PDF下载: 下载PDF文件 查看货源
内容描述: 当前3.0安培电压50到1000伏特 [CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts]
分类和应用: 二极管光电二极管IOT
文件页数/大小: 2 页 / 336 K
品牌: DAESAN [ DAESAN ELECTRONICS CORP. ]
 浏览型号S3J的Datasheet PDF文件第2页  
S3A THRU S3M
Features
· For surface mounted applications
· Glass passivated junction
· Low profile package
· Built-in strain relief, ideal for automated placement
· Plastic package has Unerwrites Laboratory
Flammability Classification 94V-0
· High temperature soldering guaranteed: 250℃/10
seconds, at terminals
CURRENT 3.0 Amperes
VOLTAGE 50 to 1000 Volts
DO-214AB (SMC)
0.124(3.15)
0.108(2.75)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
0.012(0.31)
0.006(0.15)
0.103(2.62)
0.079(2.00)
0.050(1.27)
0.030(0.76)
0.008(0.203)
MAX.
0.320(8.13)
0.305(7.75)
Mechanical Data
· Case : JEDEC SMC(DO-214AB) molded plastic body
· Terminals : Plated axial lead solderable per
MIL-STD-750, method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.007 ounce, 0.25 gram
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=75℃ (Note 2)
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method) T
L
=75℃
Maximum instantaneous forward voltage
at 1.0A
Maximum reverse
current at rated voltage
T
A
=25℃
T
A
=125℃
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
JL
JA
trr
C
J
T
J
T
STG
S3A
50
35
50
S3B
100
70
100
S3D
200
140
200
S3G
400
280
400
3.0
100.0
1.15
1.0
250
13.0
47.0
2.5
60.0
-55 to +175
S3J
600
420
600
S3K
800
560
800
S3M
1000
700
1000
Units
Volts
Volts
Volts
Amps
Amps
Volts
μA
℃/W
μS
pF
Typical thermal resistance (Note 2)
Typical reverse capacitance (Note 3)
Typical junction capacitance (Note 1)
Operating and storage temperature range
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V dc.
(2) Thermal resistance from junction to ambient and from junction to lead mounted on 0.2×0.2"(0.5×0.5mm)
copper opad areas.
(3) Reverse recovery test conditions:I
F
=0.5A, I
R
=1.0A, Irr=0.25A