ELECTRICAL CHARACTERISTIC
Ratings at 25℃ ambient temperature unless otherwise specified. VF=3.5V at IF=100A (uni-directional only)
Device Type
S MC J 33(C
)
S MC J 33(C
)A
S MC J 36(C
)
S MC J 36(C
)A
S MC J 40(C
)
S MC J 40(C
)A
S MC J 43(C
)
S MC J 43(C
)A
S MC J 45(C
)
S MC J 45(C
)A
S MC J 48(C
)
S MC J 48(C
)A
S MC J 51(C
)
S MC J 51(C
)A
S MC J 54(C
)
S MC J 54(C
)A
S MC J 58(C
)
S MC J 58(C
)A
S MC J 60(C
)
S MC J 60(C
)A
S MC J 64(C
)
S MC J 64(C
)A
S MC J 70(C
)
S MC J 70(C
)A
S MC J 75(C
)
S MC J 75(C
)A
S MC J 78(C
)
S MC J 78(C
)A
S MC J 85(C
)
S MC J 85(C
)A
S MC J 90(C
)
S MC J 90(C
)A
S MC J 100(C
)
S MC J 100(C
)A
S MC J 110(C
)
S MC J 110(C
)A
S MC J 120(C
)
S MC J 120(C
)A
S MC J 130(C
)
S MC J 130(C
)A
S MC J 150(C
)
S MC J 150(C
)A
S MC J 160(C
)
S MC J 160(C
)A
S MC J 170(C
)
S MC J 170(C
)A
S MC J 188(C
)
S MC J 188(C
)A
Notes : (1)
(2)
(3)
(4)
Device
Marking
Code
UNI
BI
GFL
BFL
GFM
BFM
GFN
BFN
GFP
BFP
GFQ
BFQ
GFR
BFR
GFS
BFS
GFT
BFT
GFU
GFU
GFV
GFV
GFW
GFW
GFX
GFX
GFY
GFY
GFZ
GFZ
GGD
GGD
GGE
GGE
GGF
GGF
GGG
GGG
GGH
GGH
GGK
GGK
GGL
GGL
GGM
GGM
GGN
GGN
GGP
GGP
GGQ
GGQ
GGR
GGR
GGS
GGS
GGT
GGT
GGU
GGU
GGV
GGV
GGW
GGW
GGX
GGX
GGY
GGY
GGZ
GGZ
G HD
G HD
G HE
G HE
G HF
G HF
G HG
G HG
G HH
G HH
G HK
G HK
G HL
G HL
G HM
G HM
G HN
G HN
G HP
G HP
G HQ
G HQ
G HR
G HR
G HT
G HT
G HS
G HS
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
Max
36.7
44.9
36.7
40.6
40.0
48.9
40.0
44.2
44.4
54.3
44.4
49.1
47.8
58.4
47.8
52.8
50.0
61.1
50.0
55.3
53.3
65.1
53.3
58.9
56.7
69.3
56.7
62.7
60.0
73.3
60.0
66.3
64.4
78.7
64.4
71.2
66.7
81.5
66.7
73.7
71.1
86.9
71.1
78.6
77.8
95.1
77.8
86.0
83.3
102
83.3
92.1
86.7
106
86.7
95.8
94.4
115
94.4
104
100
122
100
111
111
136
111
123
122
149
122
135
133
163
133
147
144
176
144
159
167
204
167
185
178
218
178
197
189
231
189
209
209
255
209
231
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
33
33
36
36
40
40
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
( A)
(3)
μ
(A)
(2)
V
C
(V)
1.0
25.4
59.0
1.0
28.1
53.3
1.0
23.3
64.3
1.0
25.8
58.1
1.0
21.0
71.4
1.0
23.3
64.5
1.0
19.6
76.7
1.0
21.6
69.4
1.0
18.7
80.3
1.0
20.6
72.7
1.0
17.5
85.5
1.0
19.4
77.4
1.0
16.5
91.1
1.0
18.2
82.4
1.0
15.6
96.3
1.0
17.2
87.1
1.0
14.6
103
1.0
16.0
93
1.0
14.0
107
1.0
15.5
96
1.0
13.2
114
1.0
14.6
103
1.0
12.0
125
1.0
13.3
113
1.0
11.2
134
1.0
12.4
121
1.0
10.8
139
1.0
11.9
126
1.0
9.9
151
1.0
10.9
137
1.0
9.4
160
1.0
10.3
146
1.0
8.4
179
1.0
9.3
162
1.0
7.7
196
1.0
8.5
177
1.0
7.0
214
1.0
7.8
193
1.0
6.5
231
1.0
7.2
209
1.0
5.6
268
1.0
6.2
243
1.0
5.2
287
1.0
5.8
259
1.0
4.9
304
1.0
5.5
275
1.0
4.4
344
1.0
4.6
328
P uls e tes t: t
p
= 50ms
S urge current waveform per F ig. 3 and derate per F ig. 2
For bi-directional types having V
WM
of 10 V olts and les s, the I
D
limit is doubled
All terms and s ymbols are cons is tent with ANS I/IE E E C 62.35
DAESAN [ DAESAN ELECTRONICS CORP. ]
