ELECTRICAL CHARACTERISTIC
Ratings at 25℃ ambient temperature unless otherwise specified. VF=3.5V at IF=100A (uni-directional only)
Device Type
S MC J 5.0(C
)
S MC J 5.0(C
)A
(5)
S MC J 6.0(C
)
S MC J 6.0(C
)A
S MC J 6.5(C
)
S MC J 6.5(C
)A
S MC J 7.0(C
)
S MC J 7.0(C
)A
S MC J 7.5(C
)
S MC J 7.5(C
)A
S MC J 8.0(C
)
S MC J 8.0(C
)A
S MC J 8.5(C
)
S MC J 8.5(C
)A
S MC J 9.0(C
)
S MC J 9.0(C
)A
S MC J 10(C
)
S MC J 10(C
)A
S MC J 11(C
)
S MC J 11(C
)A
S MC J 12(C
)
S MC J 12(C
)A
S MC J 13(C
)
S MC J 13(C
)A
S MC J 14(C
)
S MC J 14(C
)A
S MC J 15(C
)
S MC J 15(C
)A
S MC J 16(C
)
S MC J 16(C
)A
S MC J 17(C
)
S MC J 17(C
)A
S MC J 18(C
)
S MC J 18(C
)A
S MC J 20(C
)
S MC J 20(C
)A
S MC J 22(C
)
S MC J 22(C
)A
S MC J 24(C
)
S MC J 24(C
)A
S MC J 26(C
)
S MC J 26(C
)A
S MC J 28(C
)
S MC J 28(C
)A
S MC J 30(C
)
S MC J 30(C
)A
Notes : (1)
(2)
(3)
(4)
(5)
Device
Marking
Code
UNI
BI
G DD
G DD
G DE
G DE
G DF
G DF
G DG
G DG
G DH
B DH
G DK
B DK
G DL
G DL
G DM
G DM
G DN
B DN
G DP
B DP
G DQ
B DG
G DR
B DR
G DS
B DS
G DT
B DT
G DU
B DU
G DV
B DV
G DW
B DW
G DX
B DX
G DY
G DY
G DZ
G DZ
GE D
BE D
GE E
BE E
GE F
GE F
GE G
GE G
GE H
BE H
GE K
BE K
GE L
BE L
GE M
BE M
GE N
GE N
GE P
GE P
GE Q
GE Q
GE R
GE R
GE S
BE S
GE T
BE T
GE U
BE U
GE V
BE V
GE W
BE W
GE X
BE X
GE Y
BE Y
GE Z
BE Z
GFD
BFD
GFE
BFE
GFF
BFF
GFG
BFG
GFH
BFH
GFK
BFK
Breakdown Voltage
V
(BR)
at I
T
(1)
(V)
Min
Max
6.40
7.82
6.40
7.07
6.67
8.15
6.67
7.37
7.22
8.82
7.22
7.98
7.78
9.51
7.78
8.60
8.33
10.2
8.33
9.21
8.89
10.9
8.89
9.83
9.44
11.5
9.44
10.4
10.0
12.2
10.0
11.1
11.1
13.6
11.1
12.3
12.2
14.9
12.2
13.5
13.3
16.3
13.3
14.7
14.4
17.6
14.4
15.9
15.6
19.1
15.6
17.2
16.7
20.4
16.7
18.5
17.8
21.8
17.8
19.7
18.9
23.1
18.9
20.9
20.0
24.4
20.0
22.1
22.2
27.1
22.2
24.5
24.4
29.8
24.4
26.9
26.7
32.6
26.7
29.5
28.9
35.3
28.9
31.9
31.1
38.0
31.1
34.4
33.3
40.7
33.3
36.8
Test
Current
I
T
(mA)
10.0
10.0
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
Voltage
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
Maximum
Maximum
Maximum
Reverse Leakage Peak Pulse Surge
Clamping
at V
WM
Current I
PPM
Voltage at I
PPM
I
D
( A)
(3)
μ
(A)
(2)
V
C
(V)
1000
156.3
9.6
1000
163.0
9.2
1000
131.6
11.4
1000
145.6
10.3
500
122.0
12.3
500
133.9
11.2
200
112.8
13.3
200
125.0
12.0
100
104.9
14.3
100
116.3
12.9
50
100.0
15.0
50
110.3
13.6
20
94.3
15.9
20
104.2
14.4
10
88.8
16.9
10
97.4
15.4
5.0
79.8
18.8
5.0
88.2
17.0
5.0
74.6
20.1
5.0
82.4
18.2
5.0
68.2
22.0
5.0
75.4
19.9
1.0
63.0
23.8
1.0
69.8
21.5
1.0
58.1
25.8
1.0
64.7
23.2
1.0
55.8
26.9
1.0
61.5
24.4
1.0
52.1
28.8
1.0
57.7
26.0
1.0
49.2
30.5
1.0
54.3
27.6
1.0
46.6
32.2
1.0
51.4
29.2
1.0
41.9
35.8
1.0
46.3
32.4
1.0
38.1
39.4
1.0
42.3
35.5
1.0
34.9
43.0
1.0
38.6
38.9
1.0
32.2
46.6
1.0
35.6
42.1
1.0
30.0
50.0
1.0
33.0
45.4
1.0
28.0
53.5
1.0
31.0
48.4
P uls e tes t: t
p
50ms
S urge current waveform per F ig. 3 and derate per F ig. 2
For bi-directional types having V
WM
of 10 V olts and les s, the I
D
limit is doubled
All terms and s ymbols are cons is tent with ANS I/IE E E C 62.35
For the bi-directional S MC G /S MC J 5.0C A, the maximum V
(B R )
is 7.25V
DAESAN [ DAESAN ELECTRONICS CORP. ]
