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DS1220Y 参数 Datasheet PDF下载

DS1220Y图片预览
型号: DS1220Y
PDF下载: 下载PDF文件 查看货源
内容描述: 16K非易失SRAM [16k Nonvolatile SRAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 8 页 / 147 K
品牌: DALLAS [ DALLAS SEMICONDUCTOR ]
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DS1220Y
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9. Each DS1220Y is marked with a 4-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The expected t
DR
is defined as starting at the date of
manufacture.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage of V
CC
.
12. t
WR1
, t
DH1
are measured from WE going high.
13. t
WR2
, t
DH2
are measured from CE going high.
14. DS1220Y modules are recognized by Underwriters Laboratory (U.L.
) under file E99151 (R).
DC TEST CONDITIONS
Outputs open.
All voltages are referenced to ground.
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0-3.0V
Timing Measurement Reference Levels
Input:1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
7 of 8