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DS1230Y-100IND 参数 Datasheet PDF下载

DS1230Y-100IND图片预览
型号: DS1230Y-100IND
PDF下载: 下载PDF文件 查看货源
内容描述: 256K非易失SRAM [256k Nonvolatile SRAM]
分类和应用: 静态存储器
文件页数/大小: 12 页 / 216 K
品牌: DALLAS [ DALLAS SEMICONDUCTOR ]
 浏览型号DS1230Y-100IND的Datasheet PDF文件第1页浏览型号DS1230Y-100IND的Datasheet PDF文件第2页浏览型号DS1230Y-100IND的Datasheet PDF文件第3页浏览型号DS1230Y-100IND的Datasheet PDF文件第4页浏览型号DS1230Y-100IND的Datasheet PDF文件第6页浏览型号DS1230Y-100IND的Datasheet PDF文件第7页浏览型号DS1230Y-100IND的Datasheet PDF文件第8页浏览型号DS1230Y-100IND的Datasheet PDF文件第9页  
DS1230Y/AB
AC ELECTRICAL CHARACTERISTICS
(cont'd)
PARAMETER
Read Cycle
Time
Access Time
to Output
Valid
OE
CE
SYMBOL
t
RC
t
ACC
t
OE
t
CO
t
COE
t
OD
DS1230AB-120
DS1230Y-120
MIN
120
120
60
120
5
35
MAX
DS1230AB-150
DS1230Y-150
MIN
150
150
70
150
5
35
MAX
DS1230AB-200
DS1230Y-200
MIN
200
200
100
200
5
35
MAX
UNITS
ns
ns
ns
ns
ns
ns
NOTES
to Output
Valid
or
CE
to
Output Active
OE
5
5
Output High Z
from
Deselection
Output Hold
from Address
Change
Write Cycle
Time
Write Pulse
Width
Address Setup
Time
Write Recovery
Time
Output High Z
from
WE
Output Active
from
WE
Data Setup
Time
Data Hold Time
t
OH
5
5
5
ns
t
WC
t
WP
t
AW
t
WR1
t
WR2
t
ODW
t
OEW
t
DS
t
DH1
t
DH2
120
90
0
5
15
35
5
50
0
10
150
100
0
5
15
35
5
60
0
10
200
100
0
5
15
35
5
80
0
10
ns
ns
ns
ns
ns
ns
ns
ns
12
13
5
5
4
12
13
3
5 of 12