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DS1643P-100 参数 Datasheet PDF下载

DS1643P-100图片预览
型号: DS1643P-100
PDF下载: 下载PDF文件 查看货源
内容描述: 非易失时钟RAM [Nonvolatile Timekeeping RAM]
分类和应用: 计时器或实时时钟微控制器和处理器外围集成电路双倍数据速率
文件页数/大小: 14 页 / 182 K
品牌: DALLAS [ DALLAS SEMICONDUCTOR ]
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DS1643/DS1643P  
DS1643 REGISTER MAP - BANK1 Table 2  
DATA  
B4  
-
-
-
X
-
ADDRES  
S
FUNCTION  
B7  
-
B6  
-
B5  
-
X
-
X
-
-
B3  
-
-
-
X
-
B2  
-
-
-
-
-
-
-
B1  
-
-
-
-
-
-
-
B0  
-
-
-
-
-
-
-
1FFF  
1FFE  
1FFD  
1FFC  
1FFB  
1FFA  
1FF9  
YEAR  
MONTH  
DATE  
00-99  
01-12  
01-31  
01-07  
00-23  
00-59  
00-59  
A
X
X
X
X
X
X
X
FT  
X
-
DAY  
HOUR  
-
-
-
-
MINUTES  
SECONDS  
CONTROL  
-
-
OSC  
1FF8  
W
R
X
X
X
X
X
X
R = READ BIT  
X = UNUSED  
FT = FREQUENCY TEST  
OSC = STOP BIT  
= WRITE BIT  
W
NOTE:  
All indicated “X” bits are not dedicated to any particular function and can be used as normal RAM bits.  
RETRIEVING DATA FROM RAM OR CLOCK  
The DS1643 is in the read mode whenever WE (write enable) is high and CE (chip enable) is low. The  
device architecture allows ripple-through access to any of the address locations in the NV SRAM. Valid  
data will be available at the DQ pins within tAA after the last address input is stable, providing that the CE  
and OE access times and states are satisfied. If CE or OE access times are not met, valid data will be  
available at the latter of chip enable access (tCEA) or at output enable access time (tOEA). The state of the  
data input/output pins (DQ) is controlled by CE and OE . If the outputs are activated before tAA , the data  
lines are driven to an intermediate state until tAA. If the address inputs are changed while CE and OE  
remain valid, output data will remain valid for output data hold time (tOH) but will then go indeterminate  
until the next address access.  
WRITING DATA TO RAM OR CLOCK  
The DS1643 is in the write mode whenever WE and CE are in their active state. The start of a write is  
referenced to the latter occurring transition of WE or CE . The addresses must be held valid throughout  
the cycle. CE or WE must return inactive for a minimum of tWR prior to the initiation of another read or  
write cycle. Data in must be valid tDS prior to the end of write and remain valid for tDH afterward. In a  
typical application, the OE signal will be high during a write cycle. However, OE can be active provided  
that care is taken with the data bus to avoid bus contention. If OE is low prior to WE transitioning low  
the data bus can become active with read data defined by the address inputs. A low transition on WE will  
then disable the outputs tWEZ after WE goes active.  
DATA RETENTION MODE  
When VCC is within nominal limits (VCC > 4.5 volts) the DS1643 can be accessed as described above with  
read or write cycles. However, when VCC is below the power-fail point VPF (point at which write  
protection occurs) the internal clock registers and RAM are blocked from access. This is accomplished  
internally by inhibiting access via the CE signal. At this time the power-on reset output signal (RST ) will  
be driven active low and will remain active until VCC returns to nominal levels. When VCC falls below the  
level of the internal battery supply, power input is switched from the VCC pin to the internal battery and  
clock activity, RAM, and clock data are maintained from the battery until VCC is returned to nominal  
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