DS1744/DS1744P Y2K-Compliant, Nonvolatile Timekeeping RAMs
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 3.3V
±10%,
T
A
= Over the operating range.)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Active Supply Current
TTL Standby Current
( CE = V
IH
)
CMOS Standby Current
( CE
³
V
CC
- 0.2V)
Input Leakage Current (Any
Input)
Output Leakage Current
(Any Output)
Output Logic 1 Voltage
(I
OUT
= -1.0mA)
Output Logic 0 Voltage
(I
OUT
= +2.1mA)
Write Protection Voltage
Battery Switchover Voltage
I
CC
I
CC1
I
CC2
I
IL
I
OL
V
OH
V
OL
V
PF
V
SO
2.80
V
BAT
or
V
PF
-1
-1
2.4
30
2
2
+1
+1
mA
mA
mA
m
A
m
A
2, 3
2, 3
2, 3
1
0.4
2.97
V
V
1
1
1, 4
AC CHARACTERISTICS—READ CYCLE (5V)
(V
CC
= 5.0V
±10%,
T
A
=
Over the operating range.)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Read Cycle Time
Address Access Time
CE to DQ Low-Z
CE Access Time
CE Data Off Time
OE to DQ Low-Z
OE Access Time
OE Data Off Time
Output Hold from Address
t
RC
t
AA
t
CEL
t
CEA
t
CEZ
t
OEL
t
OEA
t
OEZ
t
OH
70
70
5
70
25
5
35
25
5
ns
ns
ns
ns
ns
ns
ns
ns
ns
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DALLAS [ DALLAS SEMICONDUCTOR ]
