Failure Rates are reported in FITs (Failures in Time) or MTTF (Mean Time To Failure). The FIT rate
is related to MTTF by:
MTTF = 1/Fr
NOTE: MTTF is frequently used interchangeably with MTBF.
The calculated failure rate for this device/process is:
FAILURE RATE:
MTTF (YRS): 9048
FITS: 12.6
The parameters used to calculate this failure rate are as follows:
Cf: 60%
Ea: 0.7
B: 0
Tu: 25
°C
Vu: 5.5
Volts
The reliability data follows. A the start of this data is the device information. The next section is the
detailed reliability data for each stress. The reliability data section includes the latest data available
and may contain some generic data.
Device Information:
Process:
Passivation:
Die Size:
Number of Transistors:
Interconnect:
Gate Oxide Thickness:
8"-D6H-2P2M,HPVt,TCN1 ALOCOS:GOI
Passivation w/OxyNitride-Nov. 4% PSG
293 x 311
172615
Aluminum / 1% Silicon / 0.5% Copper
150 Å
ELECTRICAL CHARACTERIZATION
DESCRIPTION
ESD SENSITIVITY
ESD SENSITIVITY
ESD SENSITIVITY
ESD SENSITIVITY
ESD SENSITIVITY
LATCH-UP
LATCH-UP
DATE CODE CONDITION
0336
0336
0336
0336
0336
0336
0336
EOS/ESD S5.1 HBM 500 VOLTS
EOS/ESD S5.1 HBM 1000 VOLTS
EOS/ESD S5.1 HBM 2000 VOLTS
EOS/ESD S5.1 HBM 4000 VOLTS
EOS/ESD S5.1 HBM 8000 VOLTS
JESD78, I-TEST 125C
JESD78, Vsupply TEST 125C
Total:
READPOINT QUANTITY
1
1
1
1
1
PUL'S
PUL'S
PUL'S
PUL'S
PUL'S
3
3
3
3
3
6
6
FAILS
0
0
0
0
3
0
0
3
OPERATING LIFE
DESCRIPTION
HIGH TEMP OP LIFE
DATE CODE CONDITION
0336
125C, 5.25 VOLTS
READPOINT QUANTITY
1000 HRS
Total:
77
FAILS
0
0
TEMPERATURE CYCLE
DESCRIPTION
TEMP CYCLE
DATE CODE CONDITION
0336
-55C TO 125C
READPOINT QUANTITY
1000 CYS
Total:
77
FAILS
0
0
TEMPERATURE HUMIDITY BIAS
DESCRIPTION
HAST
DATE CODE CONDITION
0336
130C, 85%R.H.,3.5V
READPOINT QUANTITY
96
HRS
77
FAILS
0
DALLAS [ DALLAS SEMICONDUCTOR ]
