Extremely Accurate I
2
C-Integrated
RTC/TCXO/Crystal
ELECTRICAL CHARACTERISTICS (continued)
(V
CC
= 2.3V to 5.5V, V
CC
> V
BAT
, T
A
= T
MIN
to T
MAX
, unless otherwise noted.) (Typical values are at V
CC
= 3.3V, V
BAT
= 3.0V, and
T
A
= +25°C, unless otherwise noted.) (Notes 1, 2)
PARAMETER
Output Frequency
Frequency Stability vs.
Temperature (Commercial)
SYMBOL
f
OUT
∆f/f
OUT
CONDITIONS
V
CC
= 3.3V or V
BAT
= 3.3V
V
CC
= 3.3V or
V
BAT
= 3.3V,
aging offset = 00h
V
CC
= 3.3V or
V
BAT
= 3.3V,
aging offset = 00h
0°C to +40°C
>40°C to +70°C
-40°C to <0°C
0°C to +40°C
>40°C to +85°C
1
-40°C
Trim Register Frequency
Sensitivity per LSB
Temperature Accuracy
Crystal Aging
∆f/LSB
Specified at:
+25°C
+70°C
+85°C
Temp
∆f/f
0
V
CC
= 3.3V or V
BAT
= 3.3V
After reflow,
not production tested
First year
0–10 years
-3
±1.0
±5.0
0.7
0.1
0.4
0.8
+3
°C
ppm
ppm
MIN
TYP
32.768
±2
ppm
±3.5
±3.5
±2
±3.5
ppm/V
ppm
MAX
UNITS
kHz
DS3231
Frequency Stability vs.
Temperature (Industrial)
Frequency Stability vs. Voltage
∆f/f
OUT
∆f/V
ELECTRICAL CHARACTERISTICS
(V
CC
= 0V, V
BAT
= 2.3V to 5.5V,
T
A
= T
MIN
to T
MAX
, unless otherw.ise noted.) (Note 1)
PARAMETER
Active Battery Current
SYMBOL
I
BATA
CONDITIONS
EOSC
= 0, BBSQW = 0,
SCL = 400kHz (Note 4)
EOSC
= 0, BBSQW = 0,
EN32kHz = 1,
SCL = SDA = 0V or
SCL = SDA = V
BAT
(Note 4)
EOSC
= 0, BBSQW = 0,
SCL = SDA = 0V or
SCL = SDA = V
BAT
V
BAT
= 3.63V
V
BAT
= 5.5V
V
BAT
= 3.63V
V
BAT
= 5.5V
V
BAT
= 3.63V
V
BAT
= 5.5V
0.84
1.0
MIN
TYP
MAX
70
150
3.0
µA
3.5
575
µA
650
100
nA
UNITS
µA
Timekeeping Battery Current
I
BATT
Temperature Conversion Current
Data-Retention Current
I
BATTC
I
BATTDR
EOSC
= 1, SCL = SDA = 0V, +25°C
_____________________________________________________________________
3
DALLAS [ DALLAS SEMICONDUCTOR ]
