TO-92 Plastic-Encapsulate Transistors
2N3906
TRANSISTOR (PNP)
FEATURE
PNP silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the NPN transistor 2N3904 is
Recommended
This transistor is also available in the SOT-23 case with
the type designation MMBT3906
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.2
0.625
150
-55-150
Units
V
V
V
A
W
℃
℃
TO-92
1.EMITTER
2.BASE
3. COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
Collector cut-off
Emitter cut-off
current
current
current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
EBO
h
FE1
DC current gain
h
FE2
h
FE3
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
V
CE(sat)
V
BE(sat)
f
T
td
tr
ts
tf
Test
conditions
MIN
-40
-40
-5
-0.1
-50
-0.1
100
60
30
-0.4
-0.95
250
35
35
225
75
V
V
MHz
ns
ns
ns
ns
400
TYP
MAX
UNIT
V
V
V
μA
nA
μA
I
C
= -10μA, I
E
=0
I
C
=-1mA , I
B
=0
I
E
= -10μA, I
C
=0
V
CB
= -40 V,I
E
=0
V
CE
= -30 V,V
BE(off)
=-3V
V
EB
= -5 V ,
V
CE
=-1 V,
V
CE
=-1 V,
V
CE
=-1 V,
I
C
=0
I
C
= -10mA
I
C
= -50mA
I
C
= -100mA
I
C
= -50mA, I
B
= -5mA
I
C
= -50mA, I
B
= -5mA
V
CE
=-20V, I
C
= -10mA
f = 100MHz
V
CC
=-3V,V
BE
=-0.5V,
I
C
=-10mA,I
B1
=-1mA
V
CC
=-3V,Ic=-10mA
I
B1
=I
B2
=-1mA
CLASSIFICATION OF h
FE1
Rank
Range
O
100-200
Y
200-300
G
300-400
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
