TO-92 Plastic-Encapsulate Transistors
2N5401
TRANSISTOR (PNP)
TO-92
FEATURE
Switching and amplification in high voltage
Applications such as telephony
Low current(max. 600mA)
High voltage(max.160v)
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-160
-150
-5
-0.6
0.625
150
-55-150
Units
V
V
V
A
W
℃
℃
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(
BR)CBO
V
(BR)CEO
V(BR)
EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
Test
conditions
MIN
-160
-150
-5
-50
-50
80
60
50
-0.5
-1
100
300
V
V
MHz
240
TYP
MAX
UNIT
V
V
V
I
C
= -100
μ
A, I
E
=0
I
C
= -1mA, I
B
=0
I
E
= -10
μ
A, I
C
=0
V
CB
= -120 V,
V
EB
= -3V, I
C
=0
V
CE
= -5V, I
C
=-1 mA
V
CE
= -5V, I
C
= -10 mA
V
CE
= -5V, I
C
=-50 mA
I
C
= -50mA, I
B
= -5 mA
I
C
= -50mA, I
B
= -5 mA
V
CE
=-5V,
f
=30MHz
I
C
=-10mA
I
E
=0
n
A
nA
f
T
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
