TO-92 Plastic-Encapsulate Transistors
A44
FEATURES
High voltage
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
400
400
5
0.2
0.625
150
-55 to +150
Units
V
V
V
A
W
℃
℃
2. BASE
TRANSISTOR (NPN)
TO-92
1. EMITTER
3. COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE (1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
Collector-emitter saturation voltage
Base-emitter sataration voltage
Transition
frequency
V
CE(sat)
V
CE(sat)
V
BE(sat)
f
T
Test
conditions
MIN
400
400
5
0.1
5
0.1
80
70
40
80
0.2
0.3
0.75
50
V
V
V
MHz
300
TYP
MAX
UNIT
V
V
V
μA
μA
μA
I
C
= 100μA , I
E
=0
I
C
= 1mA , I
B
=0
I
E
=100μA, I
C
=0
V
CB
=400 V, I
E
=0
V
CE
=400 V
V
EB
= 4V, I
C
=0
V
CE
=10V , I
C
=10mA
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=100mA
V
CE
=10V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
= 1mA
V
CE
=20V, I
C
=10mA
f =30MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
A
80-100
B1
100-150
B2
150-200
C
200-300
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
