TO-92 Plastic-Encapsulate Transistors
A92
TRANSISTOR (PNP)
TO-92
FEATURES
High voltage
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
R
ӨJA
R
ӨJC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance, junction to Ambient
Thermal Resistance, unction to Case
Value
-300
-300
-5
-500
625
150
-55-150
200
83.3
Units
V
V
V
mA
mW
℃
℃
℃/mW
℃/mW
conditions
1.EMITTER
2.BASE
3.COLLECTOR
1 2 3
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE
(sat)
V
BE
(sat)
f
T
Test
MIN
-300
-300
-5
-0.25
-0.1
60
80
60
-0.2
-0.9
50
V
V
MHz
250
TYP
MAX
UNIT
V
V
V
μA
μA
I
C
=-100uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100μA, I
C
=0
V
CB
= -200 V
V
EB
= -5 V, I
C
=0
V
CE
= -10 V, IC=- 1 mA
V
CE
= -10V, I
C
= -10 mA
V
CE
= -10 V, I
C
= -80 mA
I
C
= -20 mA, IB= -2 mA
I
C
= -20 mA, IB= -2 mA
V
CE
= -20 V, IC= -10 mA
f = 30MHz
I
E
=0
CLASSIFICATION OF h
FE(2)
Rank
Range
A
80-100
B
1
100-150
B
2
150-200
C
200-250