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MMBT3904 参数 Datasheet PDF下载

MMBT3904图片预览
型号: MMBT3904
PDF下载: 下载PDF文件 查看货源
内容描述: SOT- 23塑封装晶体管 [SOT-23 Plastic-Encapsulate Transistors]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 2 页 / 180 K
品牌: DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
 浏览型号MMBT3904的Datasheet PDF文件第2页  
SOT-23
MMBT3904
Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
SOT-23
FEATURES
As complementary type the PNP transistor MMBT3906 is recommended
Epitaxial planar die construction
MARKING: 1AM
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Parameter
Value
60
40
6
200
200
625
150
-55 to +150
Units
V
V
V
mA
mW
℃/W
1. BASE
2. EMITTER
3. COLLECTOR
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEX
I
EBO
h
FE(1)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
h
FE(2)
h
FE(3)
V
CE(sat)
V
BE(sat)
Test
I
C
= 10μA, I
E
=0
I
C
= 1mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=30V,V
BE(off)
=3V
V
EB
=5V, I
C
=0
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
= 50mA
V
CE
=1V, I
C
= 100mA
I
C
=50mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 20V, I
C
= 10mA,
f=
100MHz
V
CC
=3V,V
BE
=-0.5V
I
C
=10mA, I
B1
=-I
B2
=1.0mA
V
CC
=3.0V,I
C
=10mAdc
I
B1
=-I
B2
=1mA
300
35
35
200
50
100
60
30
0.3
0.95
V
V
MHz
nS
nS
nS
nS
conditions
MIN
60
40
6
0.1
50
0.1
400
MAX
UNIT
V
V
V
μA
nA
μA
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off
Collector cut-off
Emitter cut-off
current
current
current
f
T
td
tr
ts
tf
h
FE(1)
O
100-200
CLASSIFICATION OF
Rank
Range
Y
200-300
G
300-400