SOT-23 Plastic-Encapsulate Transistors
MMBTA13,14
FEATURES
Darlington Amplifier
Marking :
MMBTA13:K2D; MMBTA14:K3D
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
Value
30
30
10
0.3
350
417
150
-55 to +150
Units
V
V
V
A
mW
℃/W
℃
℃
TRANSISTOR (NPN)
SOT-23
Unit : mm
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
*
I
EBO
*
h
FE(1)
*
DC current gain
h
FE(2)
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
*
V
BE (sat)
*
V
BE
*
f
T
C
ob
Test
conditions
I
E
=0
MIN
30
30
10
0.1
0.1
MMBTA13
MMBTA14
V
CE
=5V, I
C
= 100mA
MMBTA13
MMBTA14
I
C
=100mA, I
B
=0.1mA
I
C
=100mA, I
B
=0.1mA
V
CE
=5V,I
C
= 100mA
V
CE
=5V,
I
C
= 10mA
5000
10000
10000
20000
1.5
2
2.0
125
12
V
V
V
MHz
pF
MAX
UNIT
V
V
V
I
C
= 100
μ
A,
I
C
= 100uA, I
B
=0
I
E
= 100
μ
A, I
C
=0
V
CB
=30 V , I
E
=0
V
EB
= 10V ,
I
C
=0
μ
A
μ
A
V
CE
=5V, I
C
= 10mA
f=
100MHz
V
CB
=10V,I
E
=0,f=1MHz
* Pulse Test : pulse width≤300μs,duty cycle≤2%.
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
