Order this document
by MPSH10/D
VHF/UHF Transistors
NPN Silicon
COLLECTOR
3
1
BASE
2
EMITTER
MPSH10
MPSH11
Motorola Preferred Devices
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
PD
PD
TJ, Tstg
Value
25
30
3.0
350
2.8
1.0
8.0
– 55 to +150
Unit
Vdc
Vdc
Vdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
Emitter – Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
25
30
3.0
—
—
—
—
—
100
100
Vdc
Vdc
Vdc
nAdc
nAdc
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
