TO-92 Plastic-Encapsulate Transistors
TO-92
S9015
TRANSISTOR (PNP)
1.EMITTER
FEATURES
High total power dissipation.(P
C
=0.45W)
High h
FE
and good linearity
Complementary to S9014
2. BASE
3. COLLECTOR
1 2 3
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-0.1
0.45
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
Test
conditions
I
E
=0
MIN
-50
-45
-5
-0.05
-0.05
60
1000
-0.3
-1
100
V
V
MHz
TYP
MAX
UNIT
V
V
V
I
C
= -100
μ
A,
I
C
= -1mA, I
B
=0
I
E
=-100
μ
A, I
C
=0
V
CB
=-50V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-5V, I
C
= -1mA
I
C
=-100mA, I
B
= -10mA
I
C
=-100mA, I
B
=-10mA
V
CE
=-5V,
I
C
= -10mA
μ
A
μ
A
f
T
h
FE(1)
A
60-150
f=
30MHz
B
100-300
C
CLASSIFICATION OF
Rank
Range
D
400-1000
200-600
DAYA [ DAYA ELECTRIC GROUP CO., LTD. ]
