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1N60P 参数 Datasheet PDF下载

1N60P图片预览
型号: 1N60P
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号肖特基二极管技术规格 [TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES]
分类和应用: 小信号肖特基二极管
文件页数/大小: 2 页 / 62 K
品牌: DCCOM [ DC COMPONENTS ]
 浏览型号1N60P的Datasheet PDF文件第2页  
DC COMPONENTS CO., LTD.
R
1N60P
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
* Metal silicon junction, majority carrier conduction.
* High current capability, low forward voltage drop.
*
*
*
*
*
Extremely low reverse current I
R
Ultra speed switching characteristics
Small temperature coefficient of forward characteristics
Satisfactory Wave detection efficiency
For use in RECORDER, TV, RADIO, TELEPHONE as
detectors, super high speed switching circuits, small
current rectifier
1.0(25.4)
MIN.
.020
(0.52)
TYP.
DO-35
MECHANICAL DATA
* Case: DO-35 glass case
* Polarity: color band denotes cathode end
* Weight: 0.13 grams approx.
1.0(25.4)
MIN.
.165(4.2)
MAX.
.079
(2.0)
MAX.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
o
ABSOLUTE RATINGS(LIMITING VALUES)
PARAMETERS
ZeneRepetitive Peak Reverse Voltage
Forward Continuous Current
Peak Forward Surge Current(t=1S)
Storage and junction Temperature Range
Maximum Lead Temperature for Soldering during 10S at 4mm from Case
T
A
=25 C
o
SYMBOL
V
RRM
I
F
I
FSM
T
STG
/ T
J
T
L
VALUE
45
50
500
-65 to +125
230
UNITS
Volts
mA
mA
o
o
C
C
ELECTRICAL CHARACTERISTICS
VALUE
PARAMETERS
Forward Voltage
Reverse Current
Junction Capacitance
Detection Efficiency
Reverse Recovey time
Junction Ambient Thermal Resistance
TEST CONDITIONS
I
F
=1mA
I
F
=200mA
V
R
=15V
V
R
=10V
f=1MHz
SYMBOL
V
F
I
R
C
J
TYP.
0.24
0.65
0.5
6.0
60
1
400
o
MAX.
0.5
1.0
1.0
UNITS
Volts
µA
pF
%
ns
C/W
V
I
=3V f=30MHz C
L
=10pF R
L
=3.8KΩ
I
F
=I
R
=1mA
I
rr
=1mA
R
C
=100Ω
η
t
rr
RθJ A