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2N3772 参数 Datasheet PDF下载

2N3772图片预览
型号: 2N3772
PDF下载: 下载PDF文件 查看货源
内容描述: 作者: NPN外延平面型晶体管技术规格 [TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 1 页 / 234 K
品牌: DCCOM [ DC COMPONENTS ]
   
DC COMPONENTS CO., LTD.
R
2N3772
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for linear amplifiers, series pass regulators,
and inductive switching applications.
TO-3
Pinning
1 = Base
2 = Emitter
Case = Collector
.135
Max
(3.43)
1.573
Max
(39.96)
.875(22.23)
.759(19.28)
.450(11.43)
.250(6.35)
.480(12.19)
.440(11.18)
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (peak)
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
CEX
V
EBO
I
C
I
C
P
D
T
J
T
STG
Rating
100
60
80
7
30
30
150
+200
-65 to +200
Unit
V
V
V
V
A
A
W
o
o
.225(5.72)
.205(5.20)
.169(4.30)
.151(3.84)
.043(1.09)
.038(0.97)
1.197(30.40)
1.177(29.90)
.681(17.30)
.655(16.64)
2
.440(11.18) 1.050(26.67)
.420(10.67) 1.011(25.68)
1
Case: Collector
.169(4.30)
.151(3.84)
C
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
Characteristic
Collector-Emitter Sustaining Voltage
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
V
CEO(sus)
V
CEX(sus)
V
CER(sus)
I
CEO
Collector Cutoff Current
I
CEX
I
CBO
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter On Voltage
DC Current Gain
(1)
(1)
Min
60
80
70
-
-
-
-
-
-
-
-
15
5
2.5
0.2
40
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
10
5
10
5
5
1.4
4
2.2
60
-
-
-
-
Unit
V
V
V
mA
mA
mA
mA
mA
V
V
V
-
-
A
MHz
-
Test Conditions
I
C
=0.2A, I
B
=0
I
C
=0.2A, V
BE(off)
=1.5V, R
BE
=100Ω
I
C
=0.2A, R
BE
=100Ω
V
CE
=50V, I
B
=0
V
CE
=100V, V
BE(off)
=1.5V
V
CE
=30V, V
BE(off)
=1.5V, T
C
=150 C
V
CB
=50V, I
E
=0
V
BE
=7V, I
C
=0
I
C
=10A, I
B
=1.5A
I
C
=20A, I
B
=4A
I
C
=10A, V
CE
=4V
I
C
=10A, V
CE
=4V
I
C
=20A, V
CE
=4V
V
CE
=60V, t=1.0s, Non-repetitive
I
C
=1A, V
CE
=4V, f=50KHz
I
C
=1A, V
CE
=4V, f=1KHz
o
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(on)
h
FE1
h
FE2
Is/b
f
T
h
fe
300µs, Duty Cycle
2%
Second Breakdown Collector with
Base Forward Bias
Current Gain - Bandwidth Product
Small-Signal Current Gain
(1)Pulse Test: Pulse Width