DC COMPONENTS CO., LTD.
R
2N4403
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and
amplifier applications.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
.500
Min
(12.70)
o
o
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
-40
-40
-5
-600
625
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.022(0.56)
.014(0.36)
3 2 1
.148(3.76)
.132(3.36)
C
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
(1)
Min
-40
-40
-5
-
-
-
-0.75
-
30
60
100
100
20
200
-
2%
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-0.1
-0.4
-0.75
-0.95
-1.3
-
-
-
300
-
-
8.5
Unit
V
V
V
µA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10µA, I
C
=0
V
CE
=-35V, V
BE
=-0.4V
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-150mA, I
B
=-15mA
I
C
=-500mA, I
B
=-50mA
I
C
=-0.1mA, V
CE
=-1V
I
C
=-1mA, V
CE
=-1V
I
C
=-10mA, V
CE
=-1V
I
C
=-150mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V
I
C
=-20mA, V
CE
=-10V, f=100MHz
V
CE
=-10V, I
E
=0, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(1)
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
h
FE1
h
FE2
DC Current Gain
(1)
h
FE3
h
FE4
h
FE5
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
f
T
C
ob
380µs, Duty Cycle
Classification of h
FE4
Rank
Range
A
100~210
B
190~300
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