DC COMPONENTS CO., LTD.
R
2N6517
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown
voltage.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
.500
Min
(12.70)
o
o
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
350
350
5
500
625
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.050
Typ
(1.27)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.022(0.56)
.014(0.36)
3 2 1
.148(3.76)
.132(3.36)
C
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
V
BE(sat)1
Min
350
350
5
-
-
-
-
-
-
-
-
-
20
30
30
20
40
-
2%
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
50
50
0.30
0.35
0.50
0.75
0.85
0.90
2
-
-
200
200
200
6
Unit
V
V
V
nA
nA
V
V
V
V
V
V
V
-
-
-
-
MHz
pF
Test Conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=250V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=20mA, I
B
=2mA
I
C
=30mA, I
B
=3mA
I
C
=10mA, I
B
=1mA
I
C
=20mA, I
B
=2mA
I
C
=30mA, I
B
=3mA
I
C
=100mA, V
CE
=10V
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=10mA, V
CE
=20V, f=20MHz
V
CB
=20V, f=1MHz, I
E
=0
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
EmitterCutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
(1)
(1)
V
BE(sat)2
V
BE(sat)3
V
BE(on)
h
FE1
h
FE2
h
FE3
h
FE4
f
T
C
ob
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
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