DC COMPONENTS CO., LTD.
R
2N7000
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET
Description
Designed for low voltage and low current applications
such as small servo motor control, power MOSFET
gate drivers, and other switching applications.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Pinning
1 = Source
2 = Gate
3 = Drain
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source Voltage (Continuous)
Drain Current (Continuous, T
C
=25 C)
Drain Current (Pulsed)
(1)
o
Symbol
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
T
J
T
STG
T
L
Rating
60
60
20
200
500
350
2.8
-55 to+150
-55 to+150
300
Unit
V
V
V
mA
mA
mW
o
mW/ C
o
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
Total Power Dissipation
o
Derate above 25 C
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature, for
10 Seconds Solding Purpose
3 2 1
C
C
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Sourse Forward Leakage Current
Gate-Sourse Reverse Leakage Current
Gate Threshold Voltage
On-State Drain Current
(1)
(1)
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
V
(BR)DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
I
D(on)
V
DS(on)1
V
DS(on)2
(1)
Min
60
-
-
-
0.8
75
-
-
-
-
100
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
1
10
-10
3
-
0.45
2.5
6
5
-
60
25
5
357
Unit
V
µA
nA
nA
V
mA
V
V
Ω
Ω
µS
pF
pF
pF
o
Test Conditions
I
D
=10µA, V
GS
=0
V
DS
=48V, V
GS
=0
V
GSF
=15V, V
DS
=0
V
GSR
=-15V, V
DS
=0
V
DS
=3V, I
D
=1mA
V
DS
=4.5V, V
DS
=10V
I
D
=75mA, V
GS
=4.5V
I
D
=500mA, V
GS
=10V
I
D
=75mA, V
GS
=4.5V
I
D
=500mA, V
GS
=10V
V
DS
=10V, I
D
=200mA
V
DS
=25V, V
GS
=0, f=1MHZ
-
Static Drain-Source On-State Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(1)
R
DS(on)1
R
DS(on)2
g
FS
C
iss
C
oss
C
rss
R
θJA
2%
Thermal Resistance, Junction to Ambient
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
C/W
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