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2SB772S 参数 Datasheet PDF下载

2SB772S图片预览
型号: 2SB772S
PDF下载: 下载PDF文件 查看货源
内容描述: 作者PNP外延平面型晶体管技术规格 [TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR]
分类和应用: 晶体晶体管局域网
文件页数/大小: 1 页 / 213 K
品牌: DCCOM [ DC COMPONENTS ]
   
DC COMPONENTS CO., LTD.
R
2SB772S
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 0.75W audio
amplifier, voltage regulator, DC-DC converter and
relay driver.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Pinning
1 = Emitter
2 = Collector
3 = Base
Absolute Maximum Ratings
(T
A
=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
o
C)
Rating
-40
-30
-5
-3
750
+150
-55 to +150
Unit
V
V
V
A
mW
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
Symbol
.050
Typ
(1.27)
3 2 1
C
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
-40
-30
-5
-
-
-
-
30
100
-
-
Typ
-
-
-
-
-
-0.3
-1
-
160
80
55
Max
-
-
-
-1
-1
-0.5
-2
-
400
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
I
C
=-100µA
I
C
=-1mA
I
E
=-10µA
V
CB
=-30V
V
EB
=-3V
I
C
=-2A, I
B
=-0.2A
I
C
=-2A, I
B
=-0.2A
I
C
=-20mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V
I
C
=-0.1A, V
CE
=-5V
I
E
=0, V
CB
=-10V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
(1)
(1)
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
f
T
C
ob
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
2%
Classification of h
FE2
Rank
Range
Q
100~200
P
160~320
E
200~400